ISSCC: CMOS world record at 410 GHz

Researchers at the University of Florida, assisted by Texas Instruments, have succeeded in driving a CMOS push-push oscillator at 410GHz. This is 200GHz higher than the existing record for CMOS circuits, and also 100GHz faster than more expensive indium phosphide chips have so far managed to go.

This may be the first time in the thirty-year history of the various high-frequency manufacturing techniques that inexpensive silicon chips have outperformed indium phosphide, gallium arsenide and other technologies, says Professor Ken O of the University of Florida. He has spent years pushing the CMOS record speed ever higher, and two years ago, together with UMC, he celebrated reaching the 105GHz mark. Now, with the Texas Instruments 45nm process presented at the ISSCC, he has succeeded in getting up to 410GHz.

Ken O expects that an many products will use this less expensive technology in the next five years, particularly imaging applications such as W-band radar (75 to 110GHz), and beyond that. It is suitable for measuring equipment to monitor the environment, for scanners that can see through clothing, for medical detectors capable of detecting skin and other cancers, and for other similar applications.

More from the ISSCC:

• SanDisk builds NAND flash chips with 3-bit cells

(ehe)